GMR e!ect in a single trilayer wire with submicron width
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چکیده
Magnetization reversal phenomena in a submicron magnetic wire with a trilayer structure were investigated by measuring the electric resistance in external magnetic "elds. The critical "eld for domain wall nucleation was observed to be slightly di!erent for each "eld sweep. The magnetoresistance measurements were repeated 200 times with a sweep rate of 6 Oe/s. The obtained distribution of critical "elds had two peaks and both moved to higher "elds as temperature was decreased. This result suggests that domain wall nucleation occurs through a thermally activated process down to 5 K. ( 1999 Elsevier Science B.V. All rights reserved.
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تاریخ انتشار 1999